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DMG3420U
1.6
20
1.4
16
1.2
1.0
I D = 1mA
12
T A = 25°C
0.8
0.6
I D = 250μA
8
0.4
4
0.2
0
-50 -25 0 25 50 75 100 125 150
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,000
0
0.2
10,000
0.4 0.6 0.8 1.0 1.2
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.4
f = 1MHz
C iss
1,000
T A = 150°C
T A = 125°C
100
C oss
C rss
100
10
T A = 85°C
T A = 25°C
10
0
5 10 15
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Capacitance
20
1
0
5 10 15 20
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
100
R DS(on)
Limited
P W = 100μs
10
1
DC
P W = 10s
0.1 T = 150°C
P W = 1ms
P W = 1s
P W = 100ms
P W = 10ms
J(max)
T A = 25°C
V GS = 10V
Single Pulse
0.01 DUT on 1 * MRP Board
0.1
1 10 100
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 11 SOA, Safe Operation Area
DMG3420U
Document number: DS31867 Rev. 5 - 2
4 of 6
www.diodes.com
September 2013
? Diodes Incorporated
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